Device Engineer
Posted 20 Jul 2026
BranchFactor Summary
The original posting with the fluff stripped out
- Management level
- Individual contributor
- Employment
- On-Site
- Contract
- Full-time
No salary listed for this role.
Field of studyElectrical Engineering, Materials Science, Physics (or related)
Study levelBachelor's or higher
Company Description
Vertical Semiconductor, a venture-backed MIT spin-out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI.
Role Overview
Vertical Semi's engineering team works across the full lifecycle of our vertical GaN power devices, from architecture and process integration through modeling, characterization, and reliability. This posting is for engineers with a background in wide-bandgap (WBG) power semiconductors, including GaN, SiC, or related technologies, at any career stage.
Where you spend most of your time will depend on your background and where the team needs help most. This could mean device modeling and simulation, on-wafer characterization, process integration, or failure analysis and reliability work.
If you have hands-on experience with wide-bandgap power devices and want to build a new device technology from the ground up, we want to hear from you.
Potential Responsibilities
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Support device architecture, process integration, and technology development for our vertical GaN power devices
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Run device modeling and simulation to inform design and process decisions
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Perform on-wafer and discrete device characterization, including DC, CV, and dynamic testing
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Support failure analysis and reliability investigations for wide-bandgap power devices
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Develop and review GDS layouts and test structures to support device learning and validation
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Collaborate with epitaxy, process, packaging, and reliability teams on cross-functional device work
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Build and run application evaluation boards to connect device behavior to system-level performance
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Keep clear records of experiments, test data, and process learnings
Required Qualifications
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B.S., M.S., or PhD in Electrical Engineering, Physics, Materials Science, or a related field
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Experience with GaN, SiC, or other wide-bandgap semiconductors, ideally in power device applications
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Hands-on experience in at least one of: device characterization, process integration, or device modeling and simulation
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Comfortable working with data analysis tools such as Python or MATLAB
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Strong communication skills and the ability to work across disciplines