Characterization & Reliability Engineer

Company Description

Vertical Semiconductor, a transformative MIT spin-out, is leading the development of vertical gallium nitride (GaN) power transistors which will revolutionize power electronics in industries such as data centers, energy systems, renewable energy and electric vehicles (EVs).

Role Description

As a rapidly growing startup, we are seeking a full-time Senior Characterization & Reliability Engineer to help drive the commercialization of vertical GaN technology and support our engineering team through its critical stages of growth. This role will focus on characterizing vertical GaN devices for a variety of target applications using both on-wafer and packaged device test setups. You will have opportunity to be hands-on in shaping the development of a world-changing power electronics, and your contributions will directly impact the success of the company and the industries we aim to disrupt. We have a preference for candidates who are able to work from our office at Greentown Labs (Somerville, MA), but are open to considering hybrid candidates.

Key Skills

• Deep knowledge of electrical characterization of power devices (IV, CV, pulsed IV, gate charge, etc.) using high-voltage test instrumentation and curve tracers for on-wafer probing with semiautomatic probe stations.

• Ability to design circuit boards for packaged device tests such as UIS and switching performance.

• Familiarity with JEDEC qualification standards (HTRB, HTGB, TDDB, thermal cycling, etc.) and their evaluation.

• Strong computer skills with proficiency in python/MATLAB or similar for data analysis and measurement automation.

• Well-versed in key power device parameter extraction for data sheets.

• Experience with schematic entry, circuit simulation, and PCB layout tools.

• Desire to work in a highly-collaborative, fast-paced startup environment.

• Power circuit design experience with GaN or SiC preferred.

• Excellent communication skills, with the ability to work effectively across cross-functional teams and with external partners.

Qualifications

Applicants should have a master’s degree or PhD in electrical engineering with a focus on power device design/characterization or have 5+ years of relevant industry experience. Familiarity with power devices for medium voltage (600-1200 V) applications such as GaN HEMTs, SiC MOSFETs, or Si IGBTs is strongly preferred. Applicant should be comfortable working closely with semiconductor device engineers and expect a high degree of ownership in their role.