Semiconductor Device Engineer

Company Description

Vertical Semiconductor, a venture-backed MIT spin-out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI.

Role Description

Vertical Semiconductor is seeking a Principal Semiconductor Device Engineer to serve as a senior technical contributor in the development and commercialization of our vertical GaN power device technology. This is a hands-on role is intended for an engineer with around 10-20 years of semiconductor R&D experience who can operate at the intersection of device physics, process integration, and manufacturability.

In this role, you will provide deep technical leadership across device architecture, process development, modeling, and characterization, while working closely with cross-functional partners in epitaxy, process engineering, packaging, reliability, and systems. You will play a critical role in defining device roadmaps, de-risking technology transitions, and guiding decisions that directly impact product performance and scalability.

This position offers the opportunity to help shape a world-changing power electronics platform at a pivotal stage, with direct influence on the company’s technical direction and long-term success. We prefer candidates who can work from our office at Greentown Labs (Somerville, MA).

Key Responsibilities

• Serve as a technical subject-matter expert for vertical GaN and wide-bandgap power devices across the full R&D lifecycle, from concept through early production readiness

• Lead the definition and evolution of device architectures, performance targets, and design trade-offs for next-generation vertical GaN power devices

• Drive device modeling, simulation, and analytical understanding to guide design optimization, scaling strategies, and reliability improvements

• Plan and execute device development programs in shared fabs and external foundries, including technology transfer and process co-development

• Partner closely with internal and external teams on CMOS-compatible GaN process integration, yield learning, and manufacturability

• Provide technical leadership in failure analysis, reliability physics, and root-cause investigations for wide-bandgap power devices

• Oversee and interpret on-wafer and discrete device characterization, including DC, CV, dynamic, and high-power testing